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RUR040N02
Transistors
Electrical characteristic curves
10
V DS =10V
1000
V GS = 4.5V
1000
V GS = 2.5V
Pulsed
Pulsed
Pulsed
1
0.1
Ta=125 ° C
Ta=75 ° C
Ta=25 ° C
Ta= ? 25 ° C
100
Ta=125 ° C
Ta=75 ° C
Ta=25 ° C
Ta= ? 25 ° C
100
Ta=125 ° C
Ta=75 ° C
Ta=25 ° C
Ta= ? 25 ° C
0.01
0.001
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10
0.01
0.1
1
10
10
0.01
0.1
1
10
GATE-SOURCE VOLTAGE : V GS (V)
Fig.1 Typical Transfer Characteristics
DRAIN CURRENT : I D (A)
Fig.2 Static Drain-Source
On-State Resistance
vs. Drain Current ( Ι )
DRAIN CURRENT : I D (A)
Fig.3 Static Drain-Source
On-State Resistance
vs. Drain Current ( ΙΙ )
1000
V GS = 1.8V
1000
V GS = 1.5V
1000
Ta=25 ° C
Pulsed
Pulsed
Pulsed
100
Ta=125 ° C
Ta=75 ° C
Ta=25 ° C
Ta= ? 25 ° C
100
Ta=125 ° C
Ta=75 ° C
Ta=25 ° C
Ta= ? 25 ° C
100
V GS = 1.5V
V GS = 1.8V
V GS = 2.5V
V GS = 4.5V
10
0.01
0.1
1
10
10
0.01
0.1
1
10
10
0.01
0.1
1
10
DRAIN CURRENT : I D (A)
Fig.4 Static Drain-Source
On-State Resistance
vs. Drain Current ( ΙΙΙ )
DRAIN CURRENT : I D (A)
Fig.5 Static Drain-Source
On-State Resistance
vs. Drain Current ( Ι )
DRAIN CURRENT : I D (A)
Fig.6 Static Drain-Source
On-State Resistance
vs. Drain Current ( )
100
80
I D =4.0A
I D =2.0A
Ta = 25 ° C
Pulsed
10
1
Ta=125 ° C
Ta=75 ° C
Ta=25 ° C
Ta= ? 25 ° C
V GS = 0V
Pulsed
10000
1000
Ta = 25 ° C
f=1MHz
V GS =0V
60
40
C iss
0.1
100
C oss
C rss
20
0
0
5
10
0.01
0.0
0.5
1.0
1.5
10
0.01
0.1
1
10
100
GATE-SOURCE VOLTAGE : V GS (V)
Fig.7 Static Drain-Source
On-State Resistance
SOURCE-DRAIN VOLTAGE : V SD (V)
Fig.8 Source Current
vs. Source-Drain Voltage
DRAIN-SOURCE VOLTAGE : V DS (V)
Fig.9 Typical Capacitance
vs. Drain-Source Voltage
vs. Gate-Source Voletage
3/4
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